摘要 :
We study photoluminescence (PL) of SiO_x (0 < x < 2) thin films after annealing at temperatures in the range of 700-1100 ℃. The SiO_x thin films were prepared by evaporation of SiO powder onto the substrate of Si(100). Two PL emission structures were observed in the measuring range of 580-755 nm. The one centred around ～730 nm was confirmed to be due to Si nanocrystals. The origin for the other one spanning the range of 580-650 nm was investigated by using hydrogen and oxygen passivations, and by short time annealing at 1100 ℃ followed by hydrogenation. Our results support the model of structural defects in SiO_2 matrix for the origin of the 580-650 nm PL peak....
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We study photoluminescence (PL) of SiO_x (0 < x < 2) thin films after annealing at temperatures in the range of 700-1100 ℃. The SiO_x thin films were prepared by evaporation of SiO powder onto the substrate of Si(100). Two PL emission structures were observed in the measuring range of 580-755 nm. The one centred around ～730 nm was confirmed to be due to Si nanocrystals. The origin for the other one spanning the range of 580-650 nm was investigated by using hydrogen and oxygen passivations, and by short time annealing at 1100 ℃ followed by hydrogenation. Our results support the model of structural defects in SiO_2 matrix for the origin of the 580-650 nm PL peak.
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摘要 :
Peak position of photoluminescence (PL) of Si nanocrystals was found to change in an exponential decay form with the increasing thickness of SiO_x (0 < x < 2) thin films. The results were interpreted in terms of a model modified from the theory of Zacharias-Streitenberger (Phys. Rev. B 62 (2000) 8391) from an energetic viewpoint. It was inferred from our model that under certain conditions regarding the energies of interfaces between the substrate and Si clusters and between the matrix and the Si clusters, the further the Si cluster away from the substrate, the larger the nc-Si size until saturation is reached. This conclusion explains our PL observations according to the quantum confinement effect....
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Peak position of photoluminescence (PL) of Si nanocrystals was found to change in an exponential decay form with the increasing thickness of SiO_x (0 < x < 2) thin films. The results were interpreted in terms of a model modified from the theory of Zacharias-Streitenberger (Phys. Rev. B 62 (2000) 8391) from an energetic viewpoint. It was inferred from our model that under certain conditions regarding the energies of interfaces between the substrate and Si clusters and between the matrix and the Si clusters, the further the Si cluster away from the substrate, the larger the nc-Si size until saturation is reached. This conclusion explains our PL observations according to the quantum confinement effect.
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